| PART |
Description |
Maker |
| RASA28BK3 |
Equerres dappui lateral reglables
|
Hammond Manufacturing Ltd.
|
| MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF210 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| IRM-8608S |
Miniature Type IRM(Lateral)
|
EVERLIGHT[Everlight Electronics Co., Ltd]
|
| HSIP148 HSIP146 HSIP184 HSIP186 HSIP165 HSIP145 HS |
Panneaux interieurs a montage lateral
|
Hammond Manufacturing Ltd.
Hammond Manufacturing L...
|
| ATC600B121BT250XT ATC600B200BT250XT ATC600B270BT25 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| NUP4101FCT1-D |
5-Pin Lateral Bi-Directional Zener Array
|
ON Semiconductor
|
| MRF19030SR3 MRF19030R3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| A2T20H330W24S A2T20H330W24SR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| 0906-2 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
